Datasheet > IXFH120N25T

IXFH120N25T

更新时间： 2023-12-06 20:13:10

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网栅开关脉冲晶体管
页数	文件大小	规格书
7页	208K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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IXFH120N25T 数据手册

IXFT120N25T

IXFH120N25T

Symbol

Test Conditions

Characteristic Values

TO-268 Outline

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 0.5 • I_D25, Note 1

V_GS= 0V, V_DS= 25V, f = 1MHz

105

C_iss

C_oss

C_rss

11.3

1025

136

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 2Ω (External)

Terminals: 1 - Gate

3 - Source

2,4 - Drain

Q_g(on)

Q_gs

180

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

R_thJC

R_thCS

0.14 °C/W

°C/W

TO-247

0.21

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

120

480

1.4

I_S

V_GS= 0V

TO-247 Outline

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= 100A, V_GS= 0V, Note 1

t_rr

I_RM

Q_RM

108

1.1

μC

∅ P

I_F= 60A, -di/dt = 100A/μs,

V_R= 100V, V_GS= 0V

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Inches

Min. Max.

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

PRELIMINARY TECHNICAL INFORMATION

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

∅P 3.55

3.65

.140 .144

5.89

6.40 0.232 0.252

4.32

6.15 BSC

5.49

.170 .216

242 BSC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4 5 6 7

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