Datasheet > IXFH12N90Q

IXFH12N90Q

更新时间： 2023-12-06 20:13:28

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	139K
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IXFH12N90Q 数据手册

HiPerFET^TM

Power MOSFETs

Q Class

IXFH 12N90Q V_DSS

IXFT 12N90Q I_D25

= 900 V

= 12 A

= 0.9 W

R_DS(on)

N-Channel Enhancement Mode

Avalanche Rated

t_rr£ 200 ns

Low Q_g, High dv/dt

Preliminary data sheet

Symbol

TestConditions

MaximumRatings

TO-247 AD (IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

900

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

I_DM

T_C= 25°C

T_C= 25°C,

pulse width limited by T_JM

I_AR

T_C= 25°C

E_AR

T_C= 25°C

TO-268 (D3) ( IXFT)

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

G = Gate

S = Source

= Drain

T_L

1.6 mm (0.063 in) from case for 10 s

Mountingtorque

300

°C

TAB = Drain

M_d

1.13/10

Nm/lb.in.

Weight

TO-247AD

TO-268

Features

• IXYS advanced low Q_gprocess

• Low gate charge and capacitances

- easier to drive

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

- faster switching

• Internationalstandardpackages

• Low R_{DS (on)}

• UnclampedInductiveSwitching(UIS)

rated

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 4 mA

900

V_GS(th)

2.5

5.5

• MoldingepoxiesmeetUL94V-0

flammabilityclassification

I_GSS

V_GS= ±20 V_DC, V_DS= 0

±100

I_DSS

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

• Easy to mount

• Space savings

• Highpowerdensity

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

0.9

IXYS reserves the right to change limits, test conditions, and dimensions.

98572(11/98)

1 - 2

12 3

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