Datasheet > IXFH120N25X3

IXFH120N25X3

更新时间： 2024-11-05 19:17:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	275K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFH120N25X3 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.29	Base Number Matches：	1

IXFH120N25X3 数据手册

Preliminary Technical Information

X3-Class HiPerFET^TM

Power MOSFET

V_DSS= 250V

I_D25= 120A

R_DS(on) 12m

IXFT120N25X3HV

IXFQ120N25X3

IXFH120N25X3

N-Channel Enhancement Mode

Avalanche Rated

TO-268HV (IXFT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-3P (IXFQ)

T_J= 25C to 150C

250

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

120

230

D (Tab)

TO-247 (IXFH)

I_A

T_C= 25C

E_AS

1.2

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

480

T_J

-55 ... +150

150

C

D (Tab)

D = Drain

T_JM

T_stg

G = Gate

S = Source

-55 ... +150

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

M_d

Mounting Torque (TO-247 & TO-3P)

1.13 / 10

Nm/lb.in

Weight

TO-268HV

TO-3P

TO-247

4.0

5.5

6.0



International Standard Packages

Low R_DS(ON)and Q_G

Avalanche Rated



Low Package Inductance

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



High Power Density

Easy to Mount

Space Savings



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

250



2.5

4.5

100 nA

Applications

I_DSS

10 A

500 A



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

12 m



DS100837C(11/17)

12 3 4 5 6

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