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IXFH12N80P PDF预览

IXFH12N80P

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 238K
描述
功能与特色: 优点: 应用:

IXFH12N80P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.76其他特性:AVALANCHE RATED
雪崩能效等级(Eas):800 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):12 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):36 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH12N80P 数据手册

 浏览型号IXFH12N80P的Datasheet PDF文件第2页浏览型号IXFH12N80P的Datasheet PDF文件第3页浏览型号IXFH12N80P的Datasheet PDF文件第4页浏览型号IXFH12N80P的Datasheet PDF文件第5页浏览型号IXFH12N80P的Datasheet PDF文件第6页 
PolarHVTM HiPerFET  
Power MOSFET  
IXFH12N80P  
IXFQ12N80P  
IXFV12N80P  
IXFV12N80PS  
VDSS = 800 V  
ID25 12 A  
RDS(on) 0.85 Ω  
250 ns  
=
trr  
N-Channel Enhancement Mode  
TO-247 (IXFH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
D (TAB)  
TJ = 25°C to 150°C; RGS = 1 MΩ  
TO-3P (IXFQ)  
VGS  
Continuous  
Tranisent  
30  
40  
V
V
VGSM  
ID25  
IDM  
TC = 25°C  
12  
36  
A
A
TC = 25°C, pulse width limited by TJM  
G
D
S
D (TAB)  
IAR  
TC = 25°C  
6
A
PLUS220 (IXFV)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
0.8  
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 5 Ω  
,
10  
V/ns  
G
D
S
TC = 25°C  
360  
W
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220 SMD (IXFV...S)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
Md  
Mounting torque (TO-247, TO-3P)  
1.13/10 Nm/lb.in.  
D (TAB)  
FC  
Mounting force (PLUS220,PLUS220SMD) 11..65/2.5..15  
N/lb.  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
PLUS220 & PLUS220SMD  
4.0  
5.5  
6.0  
g
g
g
T0-3P  
TO-247  
Features  
Symbol  
Test Conditions  
Characteristic Values  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 2.5 mA  
VGS = 30 V, VDS = 0 V  
800  
V
V
3.0  
5.5  
100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
TJ = 125°C  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25 , Note 1  
0.85  
Ω
z
High power density  
DS99476E(07/06)  
© 2006 IXYS All rights reserved  

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