Datasheet > IXFH12N80P

IXFH12N80P

更新时间： 2024-01-31 15:02:20

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	238K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFH12N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFH12N80P

IXFQ12N80P

IXFV12N80P

IXFV12N80PS

V_DSS= 800 V

I_D2512 A

R_DS(on)≤ 0.85 Ω

≤ 250 ns

t_rr

N-Channel Enhancement Mode

TO-247 (IXFH)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

800

D (TAB)

T_J= 25°C to 150°C; R_GS= 1 MΩ

TO-3P (IXFQ)

V_GS

Continuous

Tranisent

V_GSM

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

D (TAB)

I_AR

T_C= 25°C

PLUS220 (IXFV)

E_AR

E_AS

T_C= 25°C

0.8

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 5 Ω

V/ns

T_C= 25°C

360

D (TAB)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

PLUS220 SMD (IXFV...S)

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

M_d

Mounting torque (TO-247, TO-3P)

1.13/10 Nm/lb.in.

D (TAB)

F_C

Mounting force (PLUS220,PLUS220SMD) 11..65/2.5..15

N/lb.

G = Gate

S = Source

D = Drain

TAB = Drain

Weight

PLUS220 & PLUS220SMD

4.0

5.5

6.0

T0-3P

TO-247

Features

Symbol

Test Conditions

Characteristic Values

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 2.5 mA

V_GS= 30 V, V_DS= 0 V

800

3.0

5.5

100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

μA

T_J= 125°C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25, Note 1

0.85

High power density

DS99476E(07/06)

12 3 4 5 6

中文翻译

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