Advanced Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
IXFH 12N50F
IXFT 12N50F
VDSS
ID25
= 500 V
= 12 A
RDS(on) = 0.4 W
trr £ 250 ns
N-ChannelEnhancementMode
AvalancheRated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
TO-247AD(IXFH)
Symbol
TestConditions
Maximum Ratings
(TAB)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
TO-268 (IXFT) Case Style
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
12
48
12
A
A
A
G
(TAB)
EAR
EAS
TC = 25°C
TC = 25°C
20
300
mJ
mJ
S
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
G = Gate,
S = Source,
D = Drain,
TAB = Drain
PD
TJ
TC = 25°C
180
W
Features
l RF capable MOSFETs
-55 ... +150
°C
l Double metal process for low gate
resistance
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
TJM
Tstg
150
-55 ... +150
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mounting torque
TO-264
0.4/6 Nm/lb.in.
Weight
TO-247
TO-264
6
4
g
g
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
VDSS
VGS = 0 V, ID = 250uA
500
3.0
V
l
DC choppers
l 13.5 MHz industrial applications
l Pulse generation
VGS(th)
VDS = VGS, ID = 2.5 mA
5.0 V
IGSS
VGS = ±20 V, VDS = 0
±100 nA
l Laser drivers
RF amplifiers
l
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
50 mA
1 mA
TJ = 125°C
Advantages
Space savings
High power density
l
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
0.4 W
l
98737 (07/00)
© 2000 IXYS All rights reserved