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IXFH12N50F PDF预览

IXFH12N50F

更新时间: 2024-02-16 07:50:30
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描述
HiPerRF Power MOSFETs F-Class: MegaHertz Switching

IXFH12N50F 数据手册

 浏览型号IXFH12N50F的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
IXFH 12N50F  
IXFT 12N50F  
VDSS  
ID25  
= 500 V  
= 12 A  
RDS(on) = 0.4 W  
trr £ 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
TO-247AD(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXFT) Case Style  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
12  
48  
12  
A
A
A
G
(TAB)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
20  
300  
mJ  
mJ  
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
PD  
TJ  
TC = 25°C  
180  
W
Features  
l RF capable MOSFETs  
-55 ... +150  
°C  
l Double metal process for low gate  
resistance  
l Low RDS (on) HDMOSTM process  
l Rugged polysilicon gate cell structure  
l Unclamped Inductive Switching (UIS)  
rated  
l Low package inductance  
- easy to drive and to protect  
l Fast intrinsic rectifier  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
TO-264  
0.4/6 Nm/lb.in.  
Weight  
TO-247  
TO-264  
6
4
g
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
DC-DC converters  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
VDSS  
VGS = 0 V, ID = 250uA  
500  
3.0  
V
l
DC choppers  
l 13.5 MHz industrial applications  
l Pulse generation  
VGS(th)  
VDS = VGS, ID = 2.5 mA  
5.0 V  
IGSS  
VGS = ±20 V, VDS = 0  
±100 nA  
l Laser drivers  
RF amplifiers  
l
IDSS  
VDS = 0.8 • VDSS  
VGS = 0 V  
50 mA  
1 mA  
TJ = 125°C  
Advantages  
Space savings  
High power density  
l
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
0.4 W  
l
98737 (07/00)  
© 2000 IXYS All rights reserved  

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