Datasheet > IXFH12N100F_03

IXFH12N100F_03

更新时间： 2024-11-05 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	106K
描述
HiPerRF Power MOSFETs

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中文翻译

获取价格

数据手册

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IXFH12N100F_03 数据手册

HiPerRF^TM

Power MOSFETs

F-Class: MegaHertz Switching

V_DSS

I_D25

= 1000V

= 12A

IXFH12N100F

IXFT12N100F

R_DS(on)≤ 1.05Ω

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, Low

Intrinsic R_g, High dV/dt, Low t_rr

TO-247 (IXFH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TAB

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

TO-268 (IXFT)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

E_AS

TAB

dV/dt

I_S≤ I_DM, di/dt < 100A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2Ω

V/ns

G = Gate

S = Source TAB = Drain

= Drain

P_D

T_C= 25°C

300

-55 ... +150

150

°C

Features

T_J

^zRF capable MOSFETs

^zDouble metal process for low gate

resistance

^zRugged polysilicon gate cell structure

^zUnclamped Inductive Switching (UIS)

rated

T_JM

T_stg

T_L

-55 ... +150

300

Maximum lead temperature for soldering

Plastic body for 10s

T_SOLD

M_d

260

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

^zLow package inductance

- easy to drive and to protect

^zFast intrinsic rectifier

Weight

TO-247

TO-268

Applications

DC-DC converters

Switched-mode and resonant-mode

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

power supplies, >500kHz switching

DC choppers

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= ± 20V, V_DS= 0V

1000

3.0

^z13.5 MHz industrial applications

^zPulse generation

^zLaser drivers

5.5

^zRF amplifiers

± 100 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

1.5 mA

Advantages

T_J= 125°C

Space savings

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

1.05

High power density

DS98856A(01/03)

中文翻译

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