Datasheet > IXA40RG1200DHGLB-TRR

IXA40RG1200DHGLB-TRR

更新时间： 2024-11-18 22:55:03

品牌	Logo	应用领域
IXYS		双极性晶体管光电二极管
页数	文件大小	规格书
4页	153K
描述
IGBT PHASELEG 1200V 30A SMPD

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中文翻译

获取价格

数据手册

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Advanced Technical Information

IXA 40PG1200DHGLB

I_C25

V_CES

V_{CE(sat) typ}= 1.85V

= 63A

=1200V

XPT IGBT phaseleg

ISOPLUS™

Surface Mount Power Device

E72873

Features

IGBTs S1, S2

• XPT IGBT

- low saturation voltage

- positive temperature coefﬁcient for

easy paralleling

- fast switching

- short tail current for optimized

performance in resonant circuits

• Sonic^TMdiode

- fast reverse recovery

- low operating forward voltage

- low leakage current

• V_CEsatdetection diode

- integrated into package

- very fast diode

Symbol

V_CES

Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

1200

V_GES

I_C25

I_C80

T_C= 25°C

T_C= 80°C

I_CM

V_CEK

V_GE= 15 V; R_G= 27 W; T_VJ= 125°C

RBSOA, clamped inductive load; L = 100 µH

105

V_CES

µs

t_SC

V_CE= 900 V; V_GE= 15 V; R_G= 27 W; T_VJ= 125°C

(SCSOA) none repetitive

P_tot

T_VJ= 25°C

230

• Package

Symbol

Conditions

Characteristic

Values

- isolated back surface

- low coupling capacity between pins

and heatsink

(T_VJ= 25°C, unless otherwise speciﬁed)

- PCB space saving

min. typ. max.

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

V_CE(sat)

I_C= 35 A; V_GE= 15 V; T_VJ= 25°C

_VJ= 125°C

1.85

2.2

2.15

V_GE(th)

I_CES

I_C= 1.5 mA; V_GE= V_CE

V_CE= V_CES; V_GE= 0 V; T_VJ= 25°C

_VJ= 125°C

5.4

6.5

0.15

Applications

0.25

• Phaseleg

- buck-boost chopper

I_GES

V_CE= 0 V_;V_GE

20 V

200

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

250

100

3.8

4.1

• Full bridge

- power supplies

- induction heating

- four quadrant DC drives

- controlled rectiﬁer

• Three phase bridge

- AC drives

Inductive load; T_VJ= 125°C

V_CE= 600 V; I_C= 35 A

V_GE= 15 V; R_G= 27 W

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600 V; V_GE= 15 V; I_C= 35 A

tbd

107

- controlled rectiﬁer

R_thJC

R_thJH

0.55 K/W

0.95 K/W

with heatsink compound (IXYS test setup)

0.75

IXYS reserves the right to change limits, test conditions and dimensions.

20120131b

1 - 3

12 3 4

中文翻译

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与IXA40RG1200DHGLB-TRR相关器件

型号	品牌	获取价格	描述	数据表
IXA45IF1200HB	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXA4I1200UC	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA4IF1200TC	IXYS	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3/2
IXA4IF1200TC	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA4IF1200UC	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA531L4	IXYS	获取价格	Half Bridge Based MOSFET Driver, 0.6A, PQCC44, PLASTIC, LCC-44
IXA531S10	IXYS	获取价格	Half Bridge Based MOSFET Driver, 0.6A, 7 X 7 MM, SSLGA-48
IXA55I1200HJ	IXYS	获取价格	Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL
IXA55I1200HJ	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXA60IF1200NA	IXYS	获取价格	Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL

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