是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 4.38 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 9 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | JEDEC-95代码: | TO-268AA |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 参考标准: | IEC-60747 |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 350 ns |
标称接通时间 (ton): | 110 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXA4IF1200UC | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
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Half Bridge Based MOSFET Driver, 0.6A, PQCC44, PLASTIC, LCC-44 | |
IXA531S10 | IXYS |
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Half Bridge Based MOSFET Driver, 0.6A, 7 X 7 MM, SSLGA-48 | |
IXA55I1200HJ | IXYS |
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Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL | |
IXA55I1200HJ | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXA60IF1200NA | IXYS |
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Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL | |
IXA60IF1200NA | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA611 | IXYS |
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600mA Half-Bridge Driver | |
IXA611P7 | IXYS |
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600mA Half-Bridge Driver | |
IXA611S3 | IXYS |
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600mA Half-Bridge Driver |