5秒后页面跳转
IXA55I1200HJ PDF预览

IXA55I1200HJ

更新时间: 2024-09-15 20:57:51
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
5页 116K
描述
Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PLASTIC, ISOPLUS247, 3 PIN

IXA55I1200HJ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:ISOPLUS
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:4.42外壳连接:ISOLATED
最大集电极电流 (IC):84 A集电极-发射极最大电压:1200 V
配置:SINGLE门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):290 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):350 ns
标称接通时间 (ton):110 nsBase Number Matches:1

IXA55I1200HJ 数据手册

 浏览型号IXA55I1200HJ的Datasheet PDF文件第2页浏览型号IXA55I1200HJ的Datasheet PDF文件第3页浏览型号IXA55I1200HJ的Datasheet PDF文件第4页浏览型号IXA55I1200HJ的Datasheet PDF文件第5页 
IXA55I1200HJ  
preliminary  
VCES  
IC25  
=
=
=
1200V  
84A  
XPT IGBT  
VCE(sat)  
1.8V  
Single IGBT  
Part number  
IXA55I1200HJ  
Backside: isolated  
(C) 2  
(G) 1  
(E) 3  
ISOPLUS247  
Features / Advantages:  
Applications:  
Package:  
Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
AC motor drives  
Solar inverter  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Soldering pins for PCB mounting  
Backside: DCB ceramic  
Reduced weight  
V~  
3600  
Medical equipment  
Uninterruptible power supply  
Air-conditioning systems  
Welding equipment  
Switched-mode and resonant-mode  
power supplies  
- low EMI  
- square RBSOA @ 3x Ic  
Advanced power cycling  
Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
Inductive heating, cookers  
Pumps, Fans  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20090409  
© 2009 IXYS all rights reserved  

IXA55I1200HJ 替代型号

型号 品牌 替代类型 描述 数据表
IXGR35N120B IXYS

功能相似

HiPerFAST IGBT ISOPLUS247

与IXA55I1200HJ相关器件

型号 品牌 获取价格 描述 数据表
IXA60IF1200NA IXYS

获取价格

Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL
IXA60IF1200NA LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA611 IXYS

获取价格

600mA Half-Bridge Driver
IXA611P7 IXYS

获取价格

600mA Half-Bridge Driver
IXA611S3 IXYS

获取价格

600mA Half-Bridge Driver
IXA70I1200NA LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA70R1200NA LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXAN0069 IXYS

获取价格

DC to DC Synchronous Converter Design
IXBA14N300HV IXYS

获取价格

Insulated Gate Bipolar Transistor
IXBA16N170AHV LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,