Datasheet > IXA531L4

IXA531L4

更新时间： 2024-11-18 20:38:07

品牌	Logo	应用领域
IXYS		驱动接口集成电路驱动器
页数	文件大小	规格书
11页	266K
描述
Half Bridge Based MOSFET Driver, 0.6A, PQCC44, PLASTIC, LCC-44

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中文翻译

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技术参数
数据手册

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IXA531L4 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Lifetime Buy	零件包装代码：	LCC
包装说明：	PLASTIC, LCC-44	针数：	44
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.76
高边驱动器：	YES	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	S-PQCC-J44	长度：	16.535 mm
功能数量：	1	端子数量：	44
最高工作温度：	125 °C	最低工作温度：	-55 °C
标称输出峰值电流：	0.6 A	封装主体材料：	PLASTIC/EPOXY
封装代码：	QCCJ	封装形状：	SQUARE
封装形式：	CHIP CARRIER	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	4.37 mm
最大供电电压：	35 V	最小供电电压：	8 V
标称供电电压：	15 V	表面贴装：	YES
温度等级：	MILITARY	端子形式：	J BEND
端子节距：	1.27 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	断开时间：	0.55 µs
接通时间：	0.55 µs	宽度：	16.535 mm
Base Number Matches：	1

IXA531L4 数据手册

IXA531

Preliminary Data Sheet

500mA 3-Phase Bridge Driver

Features

General Description

• Fully operational to +650V

• Tolerant of negative transient voltages

• dV/dt immune (50V/ns)

TheIXA531isamonolithic, 3-phase, MOSFET/IGBT

gate driver consisting of three independent, high and low

side output channels. In addition to the six inputs,

which are CMOS/TTL Compatible, for the three

corresponding high side and three low side outputs,

there are dedicated lines for FAULT, ENABLE and

RESET. Overload/Short Circuit protection is

implemented by sensing a voltage across a shunt or low

value resistor which carries load current. Upon

Overload/Short Circuit detection, all outputs are

disabled. Likewise ENABLE (EN) pin, when LOW under

abnormal operating conditions, affords soft shut down of

outputs. FAULT(FLT) signal‘s status indicates that shut

down has occurred either due to Overload/Short Circuit

in driven MOSFET/IGBT or Under Voltage on V_CL.

ClearingofFAULT(FLT)signalandrestorationof

normal operation ensue automatically after a

• Latch-up protected over entire operating range

• Fault-current shutdown for all drive outputs

• User selectable delay or latching function for

clearing of the FAULT signal, independent

user controlled clearing of the FAULT signal

is also available

• UVLO protection for all drive outputs

• Enable signal capable of disabling all driver outputs

• 3 half-bridge driver pairs (independent)

• 3.3V logic compatible

• Cross-conduction prevention logic,

220 ns - 360ns Phase leg deadtime

• Peak output current: 600mA Pull-up/Source,

600mA Pull-down/Sink

programmed delay using an RC Network wired at RST

(RESET)pin. Matchedpropagationdelaysensure

properoperationevenatveryhighswitching

frequencies. Absence of cross conduction in output

stages removes possibility of shoot through in driven

powerMOSFETsorIGBTs.

• Wide operating supply voltage range: 8.0V to 35V

• Capacitive load drive capability: 1250pF in < 100ns

• Matched, low propagation delay times

• Low supply current

• Monolithic construction

___

• Fault monitoring is accompanied by a FLT

signal indication, with programmable reset or user

selectable latched protection

• Target package power dissipation capability is 2.0W.

• Full level of function available from -55°C to + 125°C

Applications

• DrivingMOSFETsandIGBTsinhalf-bridgecircuits

• High voltage, high side and low side drivers

• MotorControls

• Available in 48-Lead 7mm x 7mm MLP Quad

package and 44-Lead PLCC package

• Switch Mode Power Supplies (SMPS)

• DCtoDCConverters

• Class D Switching Amplifiers

Ordering Information

Part

Package

IXA531S10

IXA531L4

48L - SSLGA

44L - PLCC

Warning: The IXA531 is ESD sensitive.

DS99187A(12/05)

First Release

12 3 4 5 6 7...11

中文翻译

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与IXA531L4相关器件

型号	品牌	获取价格	描述	数据表
IXA531S10	IXYS	获取价格	Half Bridge Based MOSFET Driver, 0.6A, 7 X 7 MM, SSLGA-48
IXA55I1200HJ	IXYS	获取价格	Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL
IXA55I1200HJ	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXA60IF1200NA	IXYS	获取价格	Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL
IXA60IF1200NA	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA611	IXYS	获取价格	600mA Half-Bridge Driver
IXA611P7	IXYS	获取价格	600mA Half-Bridge Driver
IXA611S3	IXYS	获取价格	600mA Half-Bridge Driver
IXA70I1200NA	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA70R1200NA	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT

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