品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | 栅 | |
页数 | 文件大小 | 规格书 |
7页 | 168K | |
描述 | ||
Insulated Gate Bipolar Transistor, |
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 2.26 | Is Samacsys: | N |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXA4I1200UC | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA4IF1200TC | IXYS |
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Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3/2 | |
IXA4IF1200TC | LITTELFUSE |
获取价格 |
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA4IF1200UC | LITTELFUSE |
获取价格 |
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA531L4 | IXYS |
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Half Bridge Based MOSFET Driver, 0.6A, PQCC44, PLASTIC, LCC-44 | |
IXA531S10 | IXYS |
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Half Bridge Based MOSFET Driver, 0.6A, 7 X 7 MM, SSLGA-48 | |
IXA55I1200HJ | IXYS |
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Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL | |
IXA55I1200HJ | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXA60IF1200NA | IXYS |
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Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL | |
IXA60IF1200NA | LITTELFUSE |
获取价格 |
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT |