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IXA45IF1200HB PDF预览

IXA45IF1200HB

更新时间: 2024-11-18 14:51:43
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
7页 168K
描述
Insulated Gate Bipolar Transistor,

IXA45IF1200HB 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:2.26Is Samacsys:N
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IXA45IF1200HB 数据手册

 浏览型号IXA45IF1200HB的Datasheet PDF文件第2页浏览型号IXA45IF1200HB的Datasheet PDF文件第3页浏览型号IXA45IF1200HB的Datasheet PDF文件第4页浏览型号IXA45IF1200HB的Datasheet PDF文件第5页浏览型号IXA45IF1200HB的Datasheet PDF文件第6页浏览型号IXA45IF1200HB的Datasheet PDF文件第7页 
IXA45IF1200HB  
VCES  
IC25  
=
=
=
1200V  
78A  
XPT IGBT  
VCE(sat)  
1.8V  
Copack  
Part number  
IXA45IF1200HB  
Backside: collector  
2 (C)  
(G) 1  
3 (E)  
TO-247  
Package:  
Features / Advantages:  
Applications:  
Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
AC motor drives  
Solar inverter  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Medical equipment  
Uninterruptible power supply  
Air-conditioning systems  
Welding equipment  
Switched-mode and resonant-mode  
power supplies  
- low EMI  
- square RBSOA @ 3x Ic  
Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
SONIC™ diode  
Inductive heating, cookers  
Pumps, Fans  
- fast and soft reverse recovery  
- low operating forward voltage  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100702b  
© 2010 IXYS all rights reserved  

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