Datasheet > IXA4I1200UC

IXA4I1200UC

更新时间： 2024-11-19 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
4页	200K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产，具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。它们具有正集电

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXA4I1200UC 数据手册

IXA4I1200UC

preliminary

V_CES

1200V

XPT IGBT

I_C25

V_CE(sat)

1.8V

Single IGBT

Part number

IXA4I1200UC

Marking on Product: X4TAU

Backside: collector

(G) 1

(E) 3

TO-252 (DPak)

Package:

Features / Advantages:

Applications:

● Easy paralleling due to the positive temperature

coefficient of the on-state voltage

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

- low EMI

- square RBSOA @ 3x Ic

● Thin wafer technology combined with the XPT design ● Inductive heating, cookers

results in a competitive low VCE(sat)

● Pumps, Fans

Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact the sales office, which is responsible for you.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.

Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20160803a

12 3 4

中文翻译

下载PDF

与IXA4I1200UC相关器件

型号	品牌	获取价格	描述	数据表
IXA4IF1200TC	IXYS	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3/2
IXA4IF1200TC	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA4IF1200UC	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA531L4	IXYS	获取价格	Half Bridge Based MOSFET Driver, 0.6A, PQCC44, PLASTIC, LCC-44
IXA531S10	IXYS	获取价格	Half Bridge Based MOSFET Driver, 0.6A, 7 X 7 MM, SSLGA-48
IXA55I1200HJ	IXYS	获取价格	Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL
IXA55I1200HJ	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXA60IF1200NA	IXYS	获取价格	Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PL
IXA60IF1200NA	LITTELFUSE	获取价格	该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXA611	IXYS	获取价格	600mA Half-Bridge Driver

与IXA4I1200UC相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

IXA4I1200UC

IXA4I1200UC 数据手册

与IXA4I1200UC相关器件

与IXA4I1200UC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IXA4I1200UC

IXA4I1200UC 数据手册

与IXA4I1200UC相关器件

与IXA4I1200UC相关文章

您还可以找

您在本页遇到什么问题？