Datasheet > IS64LV25616AL-12TLA3

IS64LV25616AL-12TLA3

更新时间： 2024-02-27 06:40:45

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
14页	125K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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IS64LV25616AL

ISSI

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

JULY2006

FEATURES

DESCRIPTION

The ISSI IS64LV25616AL is a high-speed, 4,194,304-bit

static RAM organized as 262,144 words by 16 bits. It is

fabricated using ISSI's high-performance CMOS technol-

ogy. This highly reliable process coupled with innovative

circuitdesigntechniques,yieldshigh-performanceandlow

powerconsumptiondevices.

• High-speed access time: 10, 12 ns

• CMOS low power operation

• Low stand-by power:

Less than 5 mA (typ.) CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Fully static operation: no clock or refresh

required

• Three state outputs

EasymemoryexpansionisprovidedbyusingChipEnable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Data control for upper and lower bytes

• Industrial temperature available

• Temperature Offerings:

Option A1: –40^oC to +85^oC

Option A2: –40^oC to +105^oC

Option A3: –40^oC to +125^oC

• Lead-free available

The IS64LV25616AL is packaged in the JEDEC standard

44-pinTSOPTypeIIand48-pinMiniBGA(8mmx10mm).

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. D

07/05/06

12 3 4 5 6 7...14

中文翻译

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IS64LV25616AL-12TLA3 替代型号

型号	品牌	替代类型	描述	数据表
IS64LV25616AL-12TA3	ISSI	类似代替	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
CY7C1041CV33-20ZSXA	CYPRESS	功能相似	4-Mbit (256K x 16) Static RAM
CY7C1041CV33-10ZSXA	CYPRESS	功能相似	4-Mbit (256K x 16) Static RAM

与IS64LV25616AL-12TLA3相关器件

型号	品牌	获取价格	描述	数据表
IS64LV51216	ISSI	获取价格	512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV51216-12TA3	ISSI	获取价格	512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV51216-12TLA3	ISSI	获取价格	512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV6416AL-20TA2	ISSI	获取价格	Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, PLASTIC, TSOP2-44
IS64LV6416AL-20TA3	ISSI	获取价格	Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, PLASTIC, TSOP2-44
IS64LV6416AL-25BA1	ISSI	获取价格	Standard SRAM, 64KX16, 25ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
IS64LV6416L	ISSI	获取价格	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV6416L-10BA1	ISSI	获取价格	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV6416L-10TA1	ISSI	获取价格	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV6416L-12BA2	ISSI	获取价格	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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