Datasheet > IS64VF12832EC-7.5B3LA3

IS64VF12832EC-7.5B3LA3

更新时间： 2024-02-28 23:01:37

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
36页	2452K
描述
128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

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数据手册

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IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC

IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC

128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH

SRAM

OCTOBER 2015

FEATURES

DESCRIPTION

The 4Mb product family features high-speed, low-power

synchronous static RAMs designed to provide burstable,

high-performance memory for communication and

networking applications. The IS61(64)LF/VF12836EC are

organized as 131,072 words by 36bits. The

IS61(64)LF/VF12832EC are organized as 131,072 words by

32bits. The IS61(64)LF/VF25618EC are organized as 262,144

words by 18 bits. Fabricated with ISSI's advanced CMOS

technology, the device integrates a 2-bit burst counter,

high-speed SRAM core, and high-drive capability outputs

into a single monolithic circuit. All synchronous inputs pass

through registers controlled by a positive-edge-triggered

single clock input.



Internal self-timed write cycle

Individual Byte Write Control and Global Write

Clock controlled, registered address, data and

control



Burst sequence control using MODE input

Three chip enable option for simple depth

expansion and address pipelining

Common data inputs and data outputs

Auto Power-down during deselect

Single cycle deselect



Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be one

to four bytes wide as controlled by the write control inputs.

Snooze MODE for reduced-power standby

JEDEC 100-pin QFP, 165-ball BGA and 119-ball

BGA packages

Separate byte enables allow individual bytes to be written.

The byte write operation is performed by using the byte

write enable (/BWE) input combined with one or more

individual byte write signals (/BWx). In addition, Global

Write (/GW) is available for writing all bytes at one time,

regardless of the byte write controls.



Power supply:

LF: V_DD3.3V (± 5%), V_DDQ3.3V/2.5V (± 5%)

VF: V_DD2.5V (± 5%), V_DDQ2.5V (± 5%)

JTAG Boundary Scan for BGA packages

Industrial and Automotive temperature support

Lead-free available

Bursts can be initiated with either /ADSP (Address Status

Processor) or /ADSC (Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the /ADV (burst address

advance) input pin.

Error Detection and Error Correction

The mode pin is used to select the burst sequence order.

Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH or

left floating.

FAST ACCESS TIME

Symbol

tKQ

Parameter

Clock Access Time

Cycle time

-6.5

6.5

-7.5

7.5

Units

tKC

7.5

8.5

Frequency

133

117

MHz

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. C1

09/30/2015

12 3 4 5 6 7...36

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与IS64VF12832EC-7.5B3LA3相关器件

型号	品牌	获取价格	描述	数据表
IS64VF12832EC-7.5TQA3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM
IS64VF12832EC-7.5TQLA3	ISSI	获取价格	Cache SRAM, 128KX32, 7.5ns, CMOS, PQFP100, TQFP-100
IS64VF12836A	ISSI	获取价格	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF12836A-7.5TQA3	ISSI	获取价格	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF12836EC-6.5B2A3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM
IS64VF12836EC-6.5B2LA3	ISSI	获取价格	Cache SRAM, 128KX36, 6.5ns, CMOS, PBGA119, BGA-119
IS64VF12836EC-6.5B3A3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM
IS64VF12836EC-6.5B3LA3	ISSI	获取价格	Cache SRAM, 128KX36, 6.5ns, CMOS, PBGA165, TFBGA-165
IS64VF12836EC-6.5TQA3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM
IS64VF12836EC-6.5TQLA3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

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