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IS64LV6416AL-25BA1 PDF预览

IS64LV6416AL-25BA1

更新时间: 2024-01-30 01:29:24
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
15页 86K
描述
Standard SRAM, 64KX16, 25ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

IS64LV6416AL-25BA1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:6 X 8 MM, MINI, BGA-48针数:48
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.87
最长访问时间:25 nsJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:8 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):2.75 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

IS64LV6416AL-25BA1 数据手册

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®
IS64LV6416AL  
ISSI  
64K x 16 HIGH-SPEED CMOS STATIC RAM  
PRELIMINARYINFORMATION  
APRIL2003  
FEATURES  
DESCRIPTION  
The ISSI IS64LV6416AL is a high-speed, 1,048,576-bit  
static RAM organized as 65,536 words by 16 bits. It is  
fabricated using ISSI's high-performance CMOS  
technology.Thishighlyreliableprocesscoupledwithinno-  
vative circuit design techniques, yields access times as  
fast as 20ns with low power consumption.  
• High-speed access time: 20 ns, 25ns  
• CMOS low power operation:  
38 mW (typical) operating  
10 µW (typical) standby  
• TTL compatible interface levels  
• Single power supply:  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
2.6V (-5%/+10%) (20ns)  
2.5V (-5%/+10%) (25ns)  
• Fully static operation: no clock or refresh  
required  
EasymemoryexpansionisprovidedbyusingChipEnable  
and Output Enable inputs, CE and OE. The active LOW  
Write Enable (WE) controls both writing and reading of the  
memory. A data byte allows Upper Byte (UB) and Lower  
Byte (LB) access.  
• Three state outputs  
• Data control for upper and lower bytes  
• Automotive temperature available  
The IS64LV6416AL is packaged in the JEDEC standard  
44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev.00B  
1
04/03/03  

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