是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | 6 X 8 MM, MINI, BGA-48 | 针数: | 48 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.87 |
最长访问时间: | 25 ns | JESD-30 代码: | R-PBGA-B48 |
JESD-609代码: | e0 | 长度: | 8 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 64KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 2.75 V | 最小供电电压 (Vsup): | 2.375 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS64LV6416L | ISSI |
获取价格 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS64LV6416L-10BA1 | ISSI |
获取价格 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS64LV6416L-10TA1 | ISSI |
获取价格 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS64LV6416L-12BA2 | ISSI |
获取价格 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS64LV6416L-12BA3 | ISSI |
获取价格 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS64LV6416L-12TA2 | ISSI |
获取价格 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS64LV6416L-12TA3 | ISSI |
获取价格 |
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY | |
IS64S6432-100TQA1 | ISSI |
获取价格 |
Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100 | |
IS64S6432-100TQA2 | ISSI |
获取价格 |
Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100 | |
IS64S6432-133TQA2 | ISSI |
获取价格 |
Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100 |