Datasheet > IS64LV6416L-12TA3

IS64LV6416L-12TA3

更新时间： 2024-11-30 04:22:59

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
14页	89K
描述
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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IS64LV6416L

ISSI

64K x 16 HIGH-SPEED CMOS STATIC

RAM WITH 3.3V SUPPLY

MAY2003

FEATURES

DESCRIPTION

The ISSI IS64LV6416L is a high-speed, 1,048,576-bit

static RAM organized as 65,536 words by 16 bits. It is

fabricated using ISSI's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields access times

as fast as 10 ns with low power consumption.

• High-speed access time: 10, 12 ns

• CMOS low power operation:

250 mW (typical) operating

250 µW (typical) standby

• TTL compatible interface levels

• Single 3.3V power supply

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Fully static operation: no clock or refresh

required

• Three state outputs

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs, CE and OE. The active

LOW Write Enable (WE) controls both writing and reading

of the memory. A data byte allows Upper Byte (UB) and

Lower Byte (LB) access.

• Data control for upper and lower bytes

• Industrial temperature available

• Temperature offerings:

Option A1: –40^oC to +85^oC

Option A2: –40^oC to +105^oC

Option A3: –40^oC to +125^oC

The IS64LV6416L is packaged in the JEDEC standard

44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).

FUNCTIONAL BLOCK DIAGRAM

64K x 16

MEMORY ARRAY

A0-A15

DECODER

GND

I/O0-I/O7

Lower Byte

I/O

DATA

CIRCUIT

COLUMN I/O

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

05/02/03

12 3 4 5 6 7...14

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与IS64LV6416L-12TA3相关器件

型号	品牌	获取价格	描述	数据表
IS64S6432-100TQA1	ISSI	获取价格	Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100
IS64S6432-100TQA2	ISSI	获取价格	Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100
IS64S6432-133TQA2	ISSI	获取价格	Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100
IS64S6432-133TQA3	ISSI	获取价格	Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100
IS64VF102436B-7.5TQLA3	ISSI	获取价格	Cache SRAM, 1MX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100
IS64VF12832A	ISSI	获取价格	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF12832A-7.5TQLA3	ISSI	获取价格	128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF12832EC-6.5B2A3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM
IS64VF12832EC-6.5B2LA3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM
IS64VF12832EC-6.5B3A3	ISSI	获取价格	128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM

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