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IS64LV6416L-10TA1 PDF预览

IS64LV6416L-10TA1

更新时间: 2024-02-08 09:48:32
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
14页 89K
描述
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS64LV6416L-10TA1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:PLASTIC, TSOP2-44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.21
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.415 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
最大待机电流:0.002 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.095 mA
最大供电电压 (Vsup):3.63 V最小供电电压 (Vsup):2.97 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

IS64LV6416L-10TA1 数据手册

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®
IS64LV6416L  
ISSI  
64K x 16 HIGH-SPEED CMOS STATIC  
RAM WITH 3.3V SUPPLY  
MAY2003  
FEATURES  
DESCRIPTION  
The ISSI IS64LV6416L is a high-speed, 1,048,576-bit  
static RAM organized as 65,536 words by 16 bits. It is  
fabricated using ISSI's high-performance CMOS  
technology. This highly reliable process coupled with  
innovative circuit design techniques, yields access times  
as fast as 10 ns with low power consumption.  
• High-speed access time: 10, 12 ns  
• CMOS low power operation:  
250 mW (typical) operating  
250 µW (typical) standby  
• TTL compatible interface levels  
• Single 3.3V power supply  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
Easy memory expansion is provided by using Chip  
Enable and Output Enable inputs, CE and OE. The active  
LOW Write Enable (WE) controls both writing and reading  
of the memory. A data byte allows Upper Byte (UB) and  
Lower Byte (LB) access.  
• Data control for upper and lower bytes  
• Industrial temperature available  
• Temperature offerings:  
Option A1: –40oC to +85oC  
Option A2: –40oC to +105oC  
Option A3: –40oC to +125oC  
The IS64LV6416L is packaged in the JEDEC standard  
44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
UB  
LB  
CONTROL  
CIRCUIT  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
1
05/02/03  

IS64LV6416L-10TA1 替代型号

型号 品牌 替代类型 描述 数据表
IS61LV6416L-10TI ISSI

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IS61LV6416L-10T ISSI

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CY7C1021BV33-10ZCT CYPRESS

功能相似

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, TSOP2-44

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