5秒后页面跳转
捷配首页

Datasheet > IS61LPS25636A-200TQLI-TR
IS61LPS25636A-200TQLI-TR PDF预览

IS61LPS25636A-200TQLI-TR

更新时间： 2024-11-13 22:57:59
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
35页 2595K
描述
IC SRAM 9M PARALLEL 100TQFP

阅读下载

中文翻译

获取价格

IS61LPS25636A-200TQLI-TR 数据手册

 浏览型号IS61LPS25636A-200TQLI-TR的Datasheet PDF文件第2页浏览型号IS61LPS25636A-200TQLI-TR的Datasheet PDF文件第3页浏览型号IS61LPS25636A-200TQLI-TR的Datasheet PDF文件第4页浏览型号IS61LPS25636A-200TQLI-TR的Datasheet PDF文件第5页浏览型号IS61LPS25636A-200TQLI-TR的Datasheet PDF文件第6页浏览型号IS61LPS25636A-200TQLI-TR的Datasheet PDF文件第7页 
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,  
IS61VPS51218A, IS61VPS25636A  
256K x 36, 256K x 32, 512K x 18  
9 Mb SYNCHRONOUS PIPELINED,  
SINgLE CYCLE DESELECT STATIC RAM  
JUNE 2015  
FEATURES  
DESCRIPTION  
Theꢀ ISSIꢀ IS61LPS/VPS25636A,ꢀ IS61LPS25632A,  
IS64LPS25636Aꢀ andꢀ IS61LPS/VPS51218Aꢀ areꢀ high-  
speed,ꢀ low-powerꢀ synchronousꢀ staticꢀ RAMs designed  
to provide burstable, high-performance memory for com-  
municationꢀandꢀnetworkingꢀapplications.ꢀTheꢀIS61LPS/  
VPS25636Aꢀ andꢀ IS64LPS25636Aꢀ areꢀ organizedꢀ asꢀ  
262,144ꢀ wordsꢀ byꢀ 36ꢀ bits.ꢀ ꢀ Theꢀ IS61LPS25632Aꢀ is  
organizedꢀasꢀ262,144ꢀwordsꢀbyꢀ32ꢀbits.ꢀTheꢀIS61LPS/  
VPS51218Aꢀisꢀorganizedꢀasꢀ524,288ꢀwordsꢀbyꢀ18ꢀbits.ꢀ  
Fabricatedꢀ withꢀ ISSI'sꢀ advancedꢀ CMOSꢀ technology,  
theꢀdeviceꢀintegratesꢀaꢀ2-bitꢀburstꢀcounter,ꢀhigh-speedꢀ  
SRAMꢀcore,ꢀandꢀhigh-driveꢀcapabilityꢀoutputsꢀintoꢀaꢀsingleꢀ  
monolithic circuit. All synchronous inputs pass through  
registersꢀcontrolledꢀbyꢀaꢀpositive-edge-triggeredꢀsingleꢀ  
clock input.  
• Internalꢀself-timedꢀwriteꢀcycle  
• IndividualꢀByteꢀWriteꢀControlꢀandꢀGlobalꢀWrite  
• Clockꢀcontrolled,ꢀregisteredꢀaddress,ꢀdataꢀand  
control  
• BurstꢀsequenceꢀcontrolꢀusingꢀMODEꢀinput  
• Threeꢀchipꢀenableꢀoptionꢀforꢀsimpleꢀdepthꢀex-  
pansion and address pipelining  
• Commonꢀdataꢀinputsꢀandꢀdataꢀoutputs  
• AutoꢀPower-downꢀduringꢀdeselect  
• Singleꢀcycleꢀdeselect  
• SnoozeꢀMODEꢀforꢀreduced-powerꢀstandby  
• JTAGꢀBoundaryꢀScanꢀforꢀBGAꢀpackage  
• PowerꢀSupply  
Writeꢀcyclesꢀareꢀinternallyꢀself-timedꢀandꢀareꢀinitiatedꢀbyꢀ  
theꢀrisingꢀedgeꢀofꢀtheꢀclockꢀinput.ꢀWriteꢀcyclesꢀcanꢀbeꢀ  
one to four bytes wide as controlled by the write control  
inputs.  
LPS:ꢀVdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%  
VPS:ꢀVdd 2.5V + 5%, Vddq 2.5V + 5%  
Separatebyteenablesallowindividualbytestobewritten.  
Theꢀbyteꢀwriteꢀoperationꢀisꢀperformedꢀbyꢀusingꢀtheꢀbyteꢀ  
write enable (BWE) input combined with one or more  
individual byte write signals (BWx). Inꢀaddition,ꢀGlobalꢀ  
Writeꢀ(GW) is available for writing all bytes at one time,  
regardless of the byte write controls.  
• JEDECꢀ100-PinꢀQFP,ꢀ119-ballꢀBGA,ꢀandꢀ165-  
ballꢀBGAꢀpackages  
• Lead-freeꢀavailable  
BurstsꢀcanꢀbeꢀinitiatedꢀwithꢀeitherꢀADSP (Address Status  
Processor)ꢀorꢀADSC (Address Status Cache Controller)  
inputꢀpins.ꢀSubsequentꢀburstꢀaddressesꢀcanꢀbeꢀgener-  
ated internally and controlled by the ADV (burst address  
advance) input pin.  
Theꢀmodeꢀpinꢀisꢀusedꢀtoꢀselectꢀtheꢀburstꢀsequenceꢀor-  
der,ꢀLinearꢀburstꢀisꢀachievedꢀwhenꢀthisꢀpinꢀisꢀtiedꢀLOW.ꢀ  
InterleaveꢀburstꢀisꢀachievedꢀwhenꢀthisꢀpinꢀisꢀtiedꢀHIGHꢀ  
or left floating.  
FAST ACCESS TIME  
Symbol  
Parameter  
250  
2.6ꢀ  
4ꢀ  
200  
3.1ꢀ  
5ꢀ  
166  
3.5ꢀ  
6ꢀ  
Units  
ns  
tkq  
ClockꢀAccessꢀTimeꢀ  
CycleꢀTimeꢀ  
tkc  
ns  
Frequencyꢀ  
250ꢀ  
200ꢀ  
166ꢀ  
MHz  
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc.  
1
Rev. N  
05/25/2015  
1234567...35

中文翻译

下载PDF

IS61LPS25636A-200TQLI-TR 替代型号

型号 品牌 替代类型 描述 数据表
IS61LPS25636A-200TQI-TR ISSI

完全替代

 256KX36 CACHE SRAM, 3.1ns, PQFP100, TQFP-100
IS61LPS25636A-200TQLI ISSI

类似代替

 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

与IS61LPS25636A-200TQLI-TR相关器件

型号 品牌 获取价格 描述 数据表
IS61LPS25636A-250B2 ISSI

获取价格

 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-250B2I ISSI

获取价格

 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-250B3 ISSI

获取价格

 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-250B3I ISSI

获取价格

 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-250TQ ISSI

获取价格

 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-250TQI ISSI

获取价格

 		256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636B-200TQLI ISSI

获取价格

 		Cache SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LQFP-100
IS61LPS25636D-133TQI ISSI

获取价格

 		Cache SRAM, 256KX36, 4ns, CMOS, PQFP100, TQFP-100
IS61LPS25636D-166B ISSI

获取价格

 		Cache SRAM, 256KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LPS25636D-166BI ISSI

获取价格

 		Cache SRAM, 256KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119

与IS61LPS25636A-200TQLI-TR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证