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IS61C6416AL-12TI-TR PDF预览

IS61C6416AL-12TI-TR

更新时间: 2024-11-20 22:54:47
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
15页 209K
描述
IC SRAM 1M PARALLEL 44TSOP II

IS61C6416AL-12TI-TR 数据手册

 浏览型号IS61C6416AL-12TI-TR的Datasheet PDF文件第2页浏览型号IS61C6416AL-12TI-TR的Datasheet PDF文件第3页浏览型号IS61C6416AL-12TI-TR的Datasheet PDF文件第4页浏览型号IS61C6416AL-12TI-TR的Datasheet PDF文件第5页浏览型号IS61C6416AL-12TI-TR的Datasheet PDF文件第6页浏览型号IS61C6416AL-12TI-TR的Datasheet PDF文件第7页 
IS61C6416AL IS64C6416AL  
IS62C6416AL IS65C6416AL  
64K x 16 HIGH-SPEED CMOS STATIC RAM  
JUNE2005  
FEATURES  
DESCRIPTION  
The ISSIIS61C6416AL, IS62C6416AL, IS64C6416AL and  
IS65C6416AL are high-speed, 1,048,576-bit static RAMs  
organized as 65,536 words by 16 bits. They are fabricated  
usingISSI'shigh-performanceCMOStechnology.Thishighly  
reliable process coupled with innovative circuit design tech-  
niques, yields access times as fast as 12 ns with low power  
consumption.  
IS61C6416AL and IS64C6416AL  
• High-speed access time: 12 ns, 15ns  
• Low Active Power: 175 mW (typical)  
• Low Standby Power: 1 mW (typical)  
CMOS standby  
IS62C6416AL and IS65C6416AL  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationcanbereduced  
down with CMOS input levels.  
• High-speed access time: 35 ns, 45ns  
• Low Active Power: 50 mW (typical)  
• Low Standby Power: 100 µW (typical)  
CMOS standby  
Easy memory expansion is provided by using Chip Enable  
andOutputEnableinputs,CEandOE.TheactiveLOWWrite  
Enable(WE)controlsbothwritingandreadingofthememory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• TTL compatible interface levels  
• Single 5V ± 10% power supply  
• Fully static operation: no clock or refresh  
required  
The IS61C6416AL, IS62C6416AL, IS64C6416AL and  
IS65C6416AL are packaged in the JEDEC standard 44-pin  
400-mil SOJ and 44-pin TSOP (Type II).  
• Available in 44-pin SOJ package and  
44-pin TSOP (Type II)  
• Commercial, Industrial and Automotive tempera-  
ture ranges available  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. B1  
1
01/27/2020  

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