Datasheet > IS61C64AL

IS61C64AL

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
13页	96K
描述
8K x 8 HIGH-SPEED CMOS STATIC RAM

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IS61C64AL 数据手册

IS61C64AL

ISSI

MARCH2006

8K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

DESCRIPTION

The ISSI IS61C64AL is a very high-speed, low power,

8192-word by 8-bit static RAM. It is fabricated using ISSI's

high-performance CMOS technology. This highly reliable

processcoupledwithinnovativecircuitdesigntechniques,

yields access times as fast as 10 ns with low power

consumption.

• High-speed access time: 10 ns

• CMOS low power operation

— 1 mW (typical) CMOS standby

— 125 mW (typical) operating

• TTL compatible interface levels

• Single 5V power supply

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 150 µW (typical) with CMOS input levels.

• Fully static operation: no clock or refresh

required

• Lead-free available

Easy memory expansion is provided by using one Chip

Enable input, CE. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

The IS61C64AL is packaged in the JEDEC standard 28-

pin, 300-mil SOJ, and TSOP.

FUNCTIONAL BLOCK DIAGRAM

8K x 8

MEMORY ARRAY

A0-A12

DECODER

VDD

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

03/16/06

12 3 4 5 6 7...13

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