是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 54 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.71 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 7 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | S-PBGA-B54 |
JESD-609代码: | e1 | 长度: | 8 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 8MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IS42R16800E-8BLI | ISSI | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA |
获取价格 |
|
IS42R16800E-8TL | ISSI | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 |
获取价格 |
|
IS42R16800E-8TLI | ISSI | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 |
获取价格 |
|
IS42R32160D | ISSI | Internal bank for hiding row access/precharge |
获取价格 |
|
IS42R32160D-6BL | ISSI | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-2 |
获取价格 |
|
IS42R32160D-6BLI | ISSI | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-2 |
获取价格 |