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IS42R16800E-8BL PDF预览

IS42R16800E-8BL

更新时间: 2024-02-02 16:21:33
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器内存集成电路
页数 文件大小 规格书
61页 1002K
描述
Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-54

IS42R16800E-8BL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.71
访问模式:FOUR BANK PAGE BURST最长访问时间:7 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:S-PBGA-B54
JESD-609代码:e1长度:8 mm
内存密度:134217728 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:SQUARE封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40宽度:8 mm
Base Number Matches:1

IS42R16800E-8BL 数据手册

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IS42/45R81600E  
IS42/45R16800E  
16M x 8, 8M x16  
APRIL 2010  
128Mb SYNCHRONOUS DRAM  
OVERVIEW  
FEATURES  
ISSI'sꢀ128MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ  
data transfer using pipeline architecture. All inputs and  
outputs signals refer to the rising edge of the clock input.  
Theꢀ128MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ  
•ꢀ Clockꢀfrequency:ꢀ133,ꢀ125ꢀMHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positive clock edge  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ Powerꢀsupply:ꢀ2.5Vꢀꢀ  
•ꢀ LVTTLꢀinterface  
IS42/45R81600Eꢀ IS42/45R16800Eꢀ  
4Mꢀx8ꢀx4ꢀBanksꢀ 2Mꢀx16ꢀx4ꢀBanksꢀ  
•ꢀ Programmableꢀburstꢀlengthꢀ  
– (1, 2, 4, 8, full page)  
54-pinꢀTSOPIIꢀ  
54-pinꢀTSOPII  
54-ballꢀTF-BGA  
•ꢀ Programmableꢀburstꢀsequence:ꢀ  
Sequential/Interleave  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ SelfꢀRefresh  
•ꢀ 4096ꢀrefreshꢀcyclesꢀeveryꢀ16ꢀmsꢀ(A2ꢀgrade)ꢀorꢀ  
64ꢀmsꢀ(A1ꢀgrade)  
KEY TIMING PARAMETERS  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
Parameter  
-75  
-8  
Unit  
•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)  
ClkꢀCycleꢀTimeꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
8ꢀ  
9.6ꢀ  
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ  
7.5ꢀ  
9.6ꢀ  
nsꢀ  
ns  
operations capability  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
ClkꢀFrequencyꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
command  
133ꢀ  
104ꢀ  
125ꢀ  
104ꢀ  
Mhzꢀ  
Mhz  
•ꢀ OperatingꢀTemperatureꢀRange:  
Commercial: 0oC to +70oC  
AccessꢀTimeꢀꢀfromꢀClockꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
7ꢀ  
8ꢀ  
5.4ꢀ  
6ꢀ  
nsꢀ  
ns  
Industrial: -40oC to +85oC  
Automotive Grade A1: -40oC to +85oC  
Automotive Grade A2: -40oC to +105oC  
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be  
expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated  
Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. A  
04/15/2010  

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