IRLZ34L

更新时间： 2024-11-01 11:10:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	346K
描述
Power MOSFET

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数据手册
替代型号

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IRLZ34L 数据手册

IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

R_DS(on)()

V_GS= 5 V

0.05

• Surface Mount (IRLZ34S, SiHLZ34S)

• Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)

• 175 °C Operating Temperature

• Fast Switching

Q_g(Max.) (nC)

7.1

_gs(nC)

_gd(nC)

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

D²PAK (TO-263)

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast swichting speed and ruggedized device design that

Power MOSFETs are known for, provides the designer with

an extremely efficient and reliable device for use in a wide

variety of applications.

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

N-Channel MOSFET

The through-hole version (IRLZ34L, SiHLZ34L) is available

for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

Lead (Pb) free and Halogen-free

SiHLZ34S-GE3

IRLZ34LPbF

SiHLZ34L-E3

Lead (Pb) free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

Continuous Drain Current

V_GSat 5 V

I_D

Pulsed Drain Current^a

I_DM

110

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.59

W/°C

E_AS

P_D

128

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

_C= 25 °C

V/ns

°C

T_A= 25 °C

3.7

dV/dt

4.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 175

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, Starting T_J= 25 °C, L = 285 μH, Rg = 25 , I_AS= 30 A (see fig. 12).

c. I_SD 30 A, dI/dt  200 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90418

S11-1044-Rev. D, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

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IRLZ34L 替代型号

型号	品牌	替代类型	描述	数据表
IRLZ34N	NXP	功能相似	N-channel enhancement mode Logic level TrenchMOS transistor
IRLZ34	INFINEON	功能相似	HEXFET POWER MOSFET

与IRLZ34L相关器件

型号	品牌	获取价格	描述	数据表
IRLZ34LPBF	VISHAY	获取价格	Power MOSFET
IRLZ34N	NXP	获取价格	N-channel enhancement mode Logic level TrenchMOS transistor
IRLZ34N	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ34N-010	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRLZ34NL	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ34NLPBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 55V , RDS(on) =
IRLZ34NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ34NS	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ34NSL	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRLZ34NSPBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 55V , RDS(on) =

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