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IRLZ34NPBF PDF预览

IRLZ34NPBF

更新时间: 2024-11-01 04:23:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
9页 227K
描述
HEXFET Power MOSFET

IRLZ34NPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.77Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:787087
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220AB 3pin
Samacsys Released Date:2019-07-29 04:06:33Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):110 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):30 A
最大漏源导通电阻:0.046 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):250
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):110 A
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLZ34NPBF 数据手册

 浏览型号IRLZ34NPBF的Datasheet PDF文件第2页浏览型号IRLZ34NPBF的Datasheet PDF文件第3页浏览型号IRLZ34NPBF的Datasheet PDF文件第4页浏览型号IRLZ34NPBF的Datasheet PDF文件第5页浏览型号IRLZ34NPBF的Datasheet PDF文件第6页浏览型号IRLZ34NPBF的Datasheet PDF文件第7页 
PD - 94830  
IRLZ34NPbF  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 0.035Ω  
l Fully Avalanche Rated  
l Lead-Free  
G
ID = 30A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowestpossibleon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor, providesthedesignerwithanextremelyefficient  
device for use in a wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levelstoapproximately50watts. Thelowthermalresistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
30  
21  
110  
A
PD @TC = 25°C  
Power Dissipation  
68  
W
W/°C  
V
Linear Derating Factor  
0.45  
±16  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ‚  
Avalanche Current  
110  
mJ  
16  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
6.8  
mJ  
5.0  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (1.6mm from case)  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Min.  
––––  
––––  
––––  
Typ.  
––––  
0.50  
Max.  
Units  
RθJC  
RθCS  
RθJA  
2.2  
––––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
––––  
11/11/03  

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