Datasheet > IRLZ44_11

IRLZ44_11

更新时间： 2024-11-01 11:10:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1741K
描述
Power MOSFET

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中文翻译

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IRLZ44_11 数据手册

IRLZ44, SiHLZ44

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Logic-Level Gate Drive

R_DS(on)(Ω)

V_GS= 5.0 V

0.028

RoHS*

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Fast Switching

Q_g(Max.) (nC)

Q_gs(nC)

COMPLIANT

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

TO-220AB

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRLZ44PbF

SiHLZ44-E3

IRLZ44

Lead (Pb)-free

SnPb

SiHLZ44

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

Continuous Drain Current^e

T_C= 25 °C

T_C= 100 °C

V_GSat 5.0 V

I_D

Continuous Drain Current

Pulsed Drain Current^a

200

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

E_AS

P_D

400

T_C= 25 °C

150

dV/dt

T_J, T_stg

4.5

V/ns

- 55 to + 175

300

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 179 μH, R_g= 25 Ω, I_AS= 51 A (see fig. 12).

c. I_SD≤ 51 A, dV/dt ≤ 250 A/s, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

e. Current limited by the package, (die current = 51 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91328

S11-0520-Rev. C, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRLZ44_11相关器件

型号	品牌	获取价格	描述	数据表
IRLZ44-003	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-004	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-010	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-010PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-011	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-011PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met

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