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IRLZ44-018PBF PDF预览

IRLZ44-018PBF

更新时间: 2024-11-03 06:03:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 31K
描述
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IRLZ44-018PBF 数据手册

  

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IRLZ44-019 INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-024 INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-024PBF INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-029 INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-029PBF INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-030 INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-030PBF INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-031 INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-031PBF INFINEON

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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44A SAMSUNG

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ADVANCED POWER MOSFET