IRLZ44S

更新时间： 2024-11-29 11:10:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关
页数	文件大小	规格书
8页	416K
描述
Power MOSFET

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IRLZ44S 数据手册

IRLZ44S, SiHLZ44S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Fast Switching

R_DS(on)()

V_GS= 5.0 V

0.028

Q_g(Max.) (nC)

_gs(nC)

_gd(nC)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

D²PAK (TO-263)

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHLZ44S-GE3

IRLZ44SPbF

SiHLZ44S-E3

SiHLZ44STRR-GE3^a

IRLZ44STRRPbF^a

SiHLZ44STR-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

Continuous Drain Current^f

Continuous Drain Current

Pulsed Drain Current^a

_C= 25 °C

V_GSat 5.0 V

I_D

T_C= 100 °C

I_DM

200

Linear Derating Factor

1.0

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

0.025

400

E_AS

P_D

T_C= 25 °C

150

T_A= 25 °C

3.7

dV/dt

4.5

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

T_J, T_stg

- 55 to + 175

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 179 μH, R_g= 25 , I_AS= 51 A (see fig. 12).

c. I_SD 51 A, dI/dt  250 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

f. Current limited by the package, (die current = 51 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91329

S11-1055-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

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IRLZ44S 替代型号

型号	品牌	替代类型	描述	数据表
IRLZ44SPBF	VISHAY	完全替代	Power MOSFET

与IRLZ44S相关器件

型号	品牌	获取价格	描述	数据表
IRLZ44S, SiHLZ44S	VISHAY	获取价格	Power MOSFET
IRLZ44SPBF	VISHAY	获取价格	Power MOSFET
IRLZ44SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLZ44STRL	VISHAY	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44STRL	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44STRR	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44STRRPBF	VISHAY	获取价格	Power MOSFET
IRLZ44Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRLZ44ZL	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRLZ44ZLPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5

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