型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLZ44-024PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRLZ44-029 | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRLZ44-029PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRLZ44-030 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRLZ44-030PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRLZ44-031 | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRLZ44-031PBF | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met | |
IRLZ44A | SAMSUNG |
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ADVANCED POWER MOSFET | |
IRLZ44N | INFINEON |
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Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) | |
IRLZ44N-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 41A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Met |