PD - 95156
IRLZ44NS/LPbF
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l SurfaceMount(IRLZ44NS)
l Low-profilethrough-hole(IRLZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
D
VDSS = 55V
R
DS(on) = 0ꢀ022Ω
G
ID = 47A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area" This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewellknownfor, providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications"
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4" It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package" The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2"0W in a typical surface mount application"
The through-hole version (IRLZ44NL) is available for low-
profileapplications"
2
TO-262
D
Pak
Absolute Maximum Ratings
Parameter
Maxꢀ
47
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
33
A
160
3ꢀ8
110
0ꢀ71
±16
210
25
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
11
mJ
5ꢀ0
V/ns
-55 to + 175
300 (1ꢀ6mm from case )
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
Thermal Resistance
Parameter
Junction-to-Case
Typꢀ
Maxꢀ
1ꢀ4
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
4/21/04