5秒后页面跳转
IRLZ34S PDF预览

IRLZ34S

更新时间: 2024-11-06 11:10:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 346K
描述
Power MOSFET

IRLZ34S 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.04Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):220 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):88 W
最大脉冲漏极电流 (IDM):110 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLZ34S 数据手册

 浏览型号IRLZ34S的Datasheet PDF文件第2页浏览型号IRLZ34S的Datasheet PDF文件第3页浏览型号IRLZ34S的Datasheet PDF文件第4页浏览型号IRLZ34S的Datasheet PDF文件第5页浏览型号IRLZ34S的Datasheet PDF文件第6页浏览型号IRLZ34S的Datasheet PDF文件第7页 
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
Halogen-free According to IEC 61249-2-21  
Definition  
60  
• Advanced Process Technology  
RDS(on) ()  
VGS = 5 V  
0.05  
• Surface Mount (IRLZ34S, SiHLZ34S)  
• Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)  
• 175 °C Operating Temperature  
• Fast Switching  
Qg (Max.) (nC)  
35  
7.1  
Q
Q
gs (nC)  
gd (nC)  
25  
• Fully Avalanche Rated  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
D
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay utilize  
advanced processing techniques to achieve extremely low  
on-resistance per silicon area. This benefit, combined with  
the fast swichting speed and ruggedized device design that  
Power MOSFETs are known for, provides the designer with  
an extremely efficient and reliable device for use in a wide  
variety of applications.  
I2PAK (TO-262)  
G
G
D
S
D
S
G
The D2PAK is a surface mount power package capable of  
S
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of  
its low internal connection resistance and can dissipate up  
to 2.0 W in a typical surface mount application.  
N-Channel MOSFET  
The through-hole version (IRLZ34L, SiHLZ34L) is available  
for low-profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
I2PAK (TO-262)  
-
Lead (Pb) free and Halogen-free  
SiHLZ34S-GE3  
-
-
IRLZ34LPbF  
SiHLZ34L-E3  
Lead (Pb) free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
60  
V
VGS  
10  
TC = 25 °C  
C = 100 °C  
30  
21  
Continuous Drain Current  
VGS at 5 V  
ID  
T
A
Pulsed Drain Currenta  
IDM  
110  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
0.59  
W/°C  
mJ  
EAS  
PD  
128  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
88  
W
V/ns  
°C  
TA = 25 °C  
3.7  
dV/dt  
4.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 175  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12).  
c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 90418  
S11-1044-Rev. D, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与IRLZ34S相关器件

型号 品牌 获取价格 描述 数据表
IRLZ34S, SiHLZ34S VISHAY

获取价格

Power MOSFET
IRLZ34SPBF VISHAY

获取价格

暂无描述
IRLZ34STRL VISHAY

获取价格

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLZ34STRR INFINEON

获取价格

暂无描述
IRLZ40 SAMSUNG

获取价格

N-CHANNEL LOGIC LEVEL MOSFET
IRLZ44 VISHAY

获取价格

Power MOSFET
IRLZ44 INFINEON

获取价格

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
IRLZ44 SAMSUNG

获取价格

N-CHANNEL LOGIC LEVEL MOSFET
IRLZ44_11 VISHAY

获取价格

Power MOSFET
IRLZ44-003 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met