IRLZ34SPBF

更新时间： 2024-11-01 13:08:55

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关脉冲局域网
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9页	1536K
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IRLZ34SPBF 数据手册

IRLZ34, SiHLZ34

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Logic-Level Gate Drive

R_DS(on)(Ω)

V_GS= 5.0 V

0.050

RoHS*

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Fast Switching

COMPLIANT

Q_g(Max.) (nC)

7.1

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

TO-220AB

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRLZ34PbF

SiHLZ34-E3

IRLZ34

Lead (Pb)-free

SnPb

SiHLZ34

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 5 V

I_D

_C= 100 °C

Pulsed Drain Current^a

I_DM

110

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.59

128

W/°C

E_AS

P_D

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

for 10 s

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, Starting T_J= 25 °C, L = 285 μH, R_g= 25 Ω, I_AS= 30 A (see fig. 12).

c. I_SD≤ 30 A, dI/dt ≤ 200 A/μs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91327

S11-0520-Rev. C, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRLZ34SPBF相关器件

型号	品牌	获取价格	描述	数据表
IRLZ34STRL	VISHAY	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRLZ34STRR	INFINEON	获取价格	暂无描述
IRLZ40	SAMSUNG	获取价格	N-CHANNEL LOGIC LEVEL MOSFET
IRLZ44	VISHAY	获取价格	Power MOSFET
IRLZ44	INFINEON	获取价格	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
IRLZ44	SAMSUNG	获取价格	N-CHANNEL LOGIC LEVEL MOSFET
IRLZ44_11	VISHAY	获取价格	Power MOSFET
IRLZ44-003	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRLZ44-004	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met

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