IRLZ34NL

更新时间： 2024-11-26 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	275K
描述
HEXFET Power MOSFET

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IRLZ34NL 数据手册

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PD - 9.1308A

IRLZ34NS

PRELIMINARY

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Surface Mount

V_DSS= 55V

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 0.035Ω

l Fully Avalanche Rated

I_D= 27A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowestpossibleon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

D ²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current

110

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.37

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±16

Single Pulse Avalanche Energy ꢀ

Avalanche Current

110

5.6

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case)

Thermal Resistance

Parameter

Min.

––––

Typ.

––––

Max.

2.7

Units

R_θJC

R_θJA

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount,steady-state)**

To Order

11/11/96

12 3 4 5 6 7 8

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