Datasheet > IRLR8103VTR

IRLR8103VTR

更新时间： 2024-09-13 19:48:59

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
8页	108K
描述
Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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IRLR8103VTR 数据手册

PD-94021A

IRLR8103V

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

applications

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge.The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

D-Pak

The IRLR8103V has been optimized for all parameters

that are critical in synchronous buck converters including

DEVICE CHARACTERISTICSꢀ

_DS(on), gate charge and Cdv/dt-induced turn-on immunity.

IRLR8103V

The IRLR8103V offers an extremely low combination of

Q_sw& R_DS(on)for reduced losses in both control and

synchronous FET applications.

R_DS

Q_G

7.9mΩ

27nC

12nC

29nC

(on)

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical

PCB mount application.

Q_sw

Q_oss

Absolute Maximum Ratings

Parameter

Symbol

IRLR8103V

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 10V)

Pulsed Drain Current

Power Dissipation

V_DS

V_GS

I_D

±20

T_C= 25°C

T_C= 90°C

I_DM

P_D

363

T_C= 25°C

T_C= 90°C

115

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

T_J,T_STG

I_S

–55 to 150

°C

I_SM

363

Thermal Resistance

Parameter

Max.

1.09

Units

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Case

R_θJA

R_θJC

www.irf.com

11/21/2000

12 3 4 5 6 7 8

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