Datasheet > IRHNA67164SCSD

IRHNA67164SCSD

更新时间： 2023-12-06 20:13:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	465K
描述
Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL, On DBC carrier

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IRHNA67164SCSD 数据手册

IRHNA67164

2N7581U2

Pre-Irradiation

(BR)DSS

Fig 16a. Unclamped Inductive Test Circuit

Fig 16b. Unclamped Inductive Waveforms

Fig 17b. Gate Charge Test Circuit

Fig 17a. Gate Charge Waveform

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

2018-10-24

International Rectifier HiRel Products, Inc.

1...4 5 678 9

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型号	品牌	描述	获取价格	数据表
IRHNA67164SCV	INFINEON	Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)	获取价格
IRHNA67260	INFINEON	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)	获取价格
IRHNA67260PBF	INFINEON	暂无描述	获取价格
IRHNA67260SCS	INFINEON	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)	获取价格
IRHNA67264	INFINEON	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)	获取价格
IRHNA67264A	INFINEON	Power Field-Effect Transistor,	获取价格