Datasheet > IRHNA67164SCSD

IRHNA67164SCSD

更新时间： 2023-12-06 20:13:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	465K
描述
Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL, On DBC carrier

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IRHNA67164SCSD 数据手册

IRHNA67164

2N7581U2

Pre-Irradiation

1000

100

1000

100

VGS

15V

12V

10V

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V



60 s PULSE WIDTH

Tj = 150°C



60 s PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1000

100

= 56A

= 150°C

= 25°C

= 50V

= 12V



s PULSE WIDTH

-60 -40 -20

20 40 60 80 100 120 140 160

5.5

6.5

7.5

8.5

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance Vs.

Fig 3. Typical Transfer Characteristics

Temperature

= 56A

= 150°C

= 25°C

= 12V

12 14 16 18 20

I , Drain Current (A)

120

160

200

240

Gate -to -Source Voltage (V)

GS,

Fig 6. Typical On-Resistance Vs Drain Current

Fig 5. Typical On-Resistance Vs Gate Voltage

2018-10-24

International Rectifier HiRel Products, Inc.

1 2 345 6 7...9

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