Datasheet > IRHNA597160

IRHNA597160

更新时间： 2024-09-16 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	130K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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IRHNA597160 数据手册

ꢁ

PD-94493A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

IRHNA597160

¹⁰5^{0V, P-CHANNEL}

TECHNOLOGY

Product Summary

Part Number

Radiation Level Rds(on)

0.049Ω

IRHNA597160 100K Rads (Si)

IRHNA593160 300K Rads (Si)

-47A

SMD-2

International Rectifier’s R5^TMtechnology provides high

performance power MOSFETs for space applications.

These devices have been characterized for Single Event

Effects (SEE) with useful performance up to an LET of

80 (MeV/(mg/cm²)). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor

control. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability

of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-47

= -12V, T =100°C Continuous Drain Current

-30

-188

250

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

400

-47

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

-10

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s )

3.3 ( Typical )

For footnotes refer to the last page

www.irf.com

03/16/06

12 3 4 5 6 7 8

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