Datasheet > IRHNA5S97160

IRHNA5S97160

更新时间： 2024-09-14 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1780K
描述
Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS

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IRHNA5S97160 数据手册

PPD-97942B

IRHNA5S97160

100V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

TECHNOLOGY

Product Summary

Part Number

Radiation Level

RDS(on)

I_D

IRHNA5S97160

100 kRads(Si)

-47A

0.049

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Ultra Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for Single Event Effects (SEE) with

useful performance up to an LET of 80 (MeV/(mg/cm²)).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching and temperature

stability of electrical parameters.

 Ceramic Package

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -9.6V, T_C= 25°C

Continuous Drain Current

-47

I_D2@ V_GS= -9.6V, T_C= 100°C Continuous Drain Current

-30

-188

250

2.0

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

± 12

400

-47

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-10

-55 to + 150

T_STG

°C

300 (for 5sec)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-09-04

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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