Datasheet > 晶体管 > IGBT> IRGS6B60KTRRPBF

IRGS6B60KTRRPBF

更新时间： 2024-09-13 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
13页	246K
描述
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3

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数据手册

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IRGS6B60KTRRPBF 数据手册

PD - 94575A

IRGB6B60K

IRGS6B60K

IRGSL6B60K

INSULATED GATE BIPOLAR TRANSISTOR

V_CES= 600V

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

I_C= 7.0A, T_C=100°C

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 1.8V

• Positive VCE (on) Temperature Coefficient.

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

IRGS6B60K

TO-262

IRGSL6B60K

TO-220AB

IRGB6B60K

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

7.0

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

–––

Typ.

–––

Max.

1.4

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, steady state)

Weight

0.50

–––

°C/W

–––

1.44

–––

www.irf.com

8/18/04

12 3 4 5 6 7...13

中文翻译

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