是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC PACKAGE-3 | Reach Compliance Code: | compliant |
风险等级: | 5.19 | 最大集电极电流 (IC): | 12 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 89 ns | 门极发射器阈值电压最大值: | 5.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-262 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 63 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 23 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 199 ns | 标称接通时间 (ton): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGSL4B60KTRL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 | |
IRGSL6B60K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGSL6B60KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGSL6B60KDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, | |
IRGSL6B60KDTRL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 | |
IRGSL6B60KPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGSL8B60K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGSL8B60KPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGTA035F06 | INFINEON |
获取价格 |
Transistor | |
IRGTA035U06 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7 |