5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRGTI0025M12 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |
|
| IRGTI0050M12 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |
|
| IRGTI0050M12PBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |
|
| IRGTI0075M12 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |
|
| IRGTI0075M12PBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |
|
| IRGTI0100M12 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |
|
| IRGTI0100M12PBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |
|
| IRGTI050U06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) |
|
| IRGTI065F06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 65A I(C) |
|
| IRGTI090U06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 90A I(C) |
|
英伟达新AI芯片Rubin或提前半年亮相
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
