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IRGTI0025M12 PDF预览

IRGTI0025M12

更新时间: 2024-11-06 19:31:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
4页 120K
描述
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7

IRGTI0025M12 数据手册

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与IRGTI0025M12相关器件

型号 品牌 获取价格 描述 数据表
IRGTI0050M12 INFINEON

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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
IRGTI0050M12PBF INFINEON

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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
IRGTI0075M12 INFINEON

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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
IRGTI0075M12PBF INFINEON

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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
IRGTI0100M12 INFINEON

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Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
IRGTI0100M12PBF INFINEON

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Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
IRGTI050U06 ETC

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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
IRGTI065F06 ETC

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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 65A I(C)
IRGTI090U06 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 90A I(C)
IRGTI115U06 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 130A I(C)