型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGTDN300M06 | ETC |
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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 400A I(C) | |
IRGTDN400K06 | INFINEON |
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Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel | |
IRGTDN400K06PBF | INFINEON |
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260A, 600V, N-CHANNEL IGBT | |
IRGTDN600K06 | INFINEON |
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Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel | |
IRGTDN600K06PBF | INFINEON |
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Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel | |
IRGTI0025M12 | INFINEON |
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Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 | |
IRGTI0050M12 | INFINEON |
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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 | |
IRGTI0050M12PBF | INFINEON |
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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 | |
IRGTI0075M12 | INFINEON |
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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 | |
IRGTI0075M12PBF | INFINEON |
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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7 |