Datasheet > 晶体管 > IGBT> IRGSL4B60K

IRGSL4B60K

更新时间： 2024-09-13 03:39:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
13页	296K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

获取价格

数据手册

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IRGSL4B60K 数据手册

PD - 94633A

IRGB4B60K

IRGS4B60K

IRGSL4B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features

V_CES= 600V

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

I_C= 6.8A, T_C=100°C

t_sc> 10µs, T_J=150°C

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

V_CE(on)typ. = 2.1V

Benefits

• Benchmark Efficiency for Motor Control.

n-channel

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

TO-262

TO-220

IRGS4B60K

IRGSL4B60K

IRGB4B60K

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

Gate-to-Emitter Voltage

600

V_CES

I_C@ T_C= 25°C

6.8

I_C@ T_C= 100°C

I_CM

±20

I_LM

V_GE

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

Operating Junction and

-55 to +175

T_J

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

2.4

Units

R_θJC

Junction-to-Case- IGBT

°C/W

Case-to-Sink, flat, greased surface

Junction-to-Ambient

0.50

–––

R_θ

R_θJA

–––

R_θ

Junction-to-Ambient (PCB Mount, steady state)

Weight

1.44

–––

www.irf.com

8/4/03

12 3 4 5 6 7...13

中文翻译

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