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IRGSL10B60KDPBF PDF预览

IRGSL10B60KDPBF

更新时间: 2024-09-13 03:37:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管电动机控制双极性晶体管超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
15页 366K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGSL10B60KDPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.48
最大集电极电流 (IC):22 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):34 ns
门极发射器阈值电压最大值:5.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-262JESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):156 W认证状态:Not Qualified
最大上升时间(tr):28 ns子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):276 ns
标称接通时间 (ton):50 nsBase Number Matches:1

IRGSL10B60KDPBF 数据手册

 浏览型号IRGSL10B60KDPBF的Datasheet PDF文件第2页浏览型号IRGSL10B60KDPBF的Datasheet PDF文件第3页浏览型号IRGSL10B60KDPBF的Datasheet PDF文件第4页浏览型号IRGSL10B60KDPBF的Datasheet PDF文件第5页浏览型号IRGSL10B60KDPBF的Datasheet PDF文件第6页浏览型号IRGSL10B60KDPBF的Datasheet PDF文件第7页 
PD - 94925A  
IRGB10B60KDPbF  
IRGS10B60KDPbF  
IRGSL10B60KDPbF  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
VCES = 600V  
Features  
• Low VCE (on) Non Punch Through IGBT Technology.  
• Low Diode VF.  
• 10µs Short Circuit Capability.  
IC = 12A, TC=100°C  
tsc > 10µs, TJ=150°C  
• Square RBSOA.  
G
• Ultrasoft Diode Reverse Recovery Characteristics.  
• Positive VCE (on) Temperature Coefficient.  
• Lead-Free  
E
VCE(on) typ. = 1.8V  
n-channel  
Benefits  
• Benchmark Efficiency for Motor Control.  
• Rugged Transient Performance.  
• Low EMI.  
• Excellent Current Sharing in Parallel Operation.  
D2Pak  
IRGS10B60KD IRGSL10B60KD  
TO-262  
TO-220AB  
IRGB10B60KD  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
600  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
22  
12  
44  
ILM  
Clamped Inductive Load Current „  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
44  
A
IF @ TC = 25°C  
IF @ TC = 100°C  
IFM  
22  
10  
44  
VGE  
± 20  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
156  
W
PD @ TC = 100°C Maximum Power Dissipation  
62  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
°C  
300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Junction-to-Case - IGBT  
Min.  
–––  
–––  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.8  
Units  
°C/W  
g
RθJC  
RθJC  
RθCS  
RθJA  
RθJA  
Wt  
Junction-to-Case - Diode  
–––  
3.4  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Junction-to-Ambient (PCB Mount, steady state)‚  
Weight  
0.50  
–––  
–––  
62  
–––  
40  
1.44  
–––  
www.irf.com  
1
11/24/04  

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