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IRGSL4640DPBF PDF预览

IRGSL4640DPBF

更新时间： 2024-09-13 19:36:07
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
18页 792K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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IRGSL4640DPBF 数据手册

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IRGS4640DPbF  
IRGSL4640DPbF  
IRGB4640DPbF  
IRGP4640D(-E)PbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
VCES = 600V  
C
IC = 40A, TC =100°C  
E
E
E
E
tSC ≥ 5µs, TJ(max) = 175°C  
CE(ON) typ. = 1.60V @ IC = 24A  
E
G
C
C
C
C
C
G
G
G
G
G
E
IRGP4640D-EPbF  
TO-247AD  
V
IRGS4640DPbF  
D2Pak  
IRGSL4640DPbF IRGB4640DPbF  
TO-262Pak  
TO-220AC  
n-channel  
Applications  
G
Gate  
C
E
•
•
•
•
Industrial Motor Drive  
Collector  
Emitter  
Inverters  
UPS  
Welding  
Features  
Benefits  
Low VCE(ON) and switching losses  
High efficiency in a wide range of applications and switching  
Improved reliability due to rugged hard switching  
performance and high power capability  
Excellent current sharing in parallel operation  
Enables short circuit protection scheme  
Environmentally friendly  
Square RBSOA and maximum junction temperature 175°C  
Positive VCE (ON) temperature coefficient  
5µs Short Circuit SOA  
Lead-Free, RoHS Compliant  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Quantity  
50  
Tube  
Tape and Reel Right  
Tape and Reel Left  
Tube  
IRGS4640DPbF  
IRGS4640DTRRPbF  
IRGS4640DTRLPbF  
IRGSL4640DPbF  
IRGB4640DPbF  
IRGS4640DPbF  
D2Pak  
800  
800  
50  
50  
25  
IRGSL4640DPbF  
IRGB4640DPbF  
IRGP4640DPbF  
IRGP4640D-EPbF  
TO-262  
TO-220AB  
TO-247AC  
TO-247AD  
Tube  
Tube  
Tube  
IRGP4640DPbF  
IRGP4640D-EPbF  
25  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
600  
65  
40  
72  
96  
65  
40  
96  
±20  
±30  
250  
125  
V
A
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current   
Continuous Gate-to-Emitter Voltage  
Transient Gate to Emitter Voltage  
Maximum Power Dissipation  
ILM  
IF @ TC = 25°C  
IF @ TC = 100°C  
IFM  
VGE  
V
PD @ TC = 25°C  
PD @ TC = 100°C  
W
Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec. (1.6mm from case)  
C
300  
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)  
10 lbf·in (1.1 N·m)  
Notes through are on page 8  
www.irf.com © 2015 International Rectifier  
1
Submit Datasheet Feedback  
January 20, 2015  
1234567...18

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