5秒后页面跳转
捷配首页

Datasheet > IRGSL14C40L
IRGSL14C40L PDF预览

IRGSL14C40L

更新时间： 2024-09-12 22:24:03
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极双极性晶体管
页数 文件大小 规格书
11页 157K
描述
IGBT with on-chip Gate-Emitter and Gate-Collector clamps

阅读下载

中文翻译

获取价格

IRGSL14C40L 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：PLASTIC PACKAGE-3Reach Compliance Code：unknown
风险等级：5.12其他特性：LOW SATURATION VOLTAGE
最大集电极电流 (IC)：20 A集电极-发射极最大电压：370 V
配置：SINGLE WITH BUILT-IN DIODE AND RESISTORJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：225极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：AUTOMOTIVE IGNITION晶体管元件材料：SILICON
标称接通时间 (ton)：3700 nsBase Number Matches：1

IRGSL14C40L 数据手册

 浏览型号IRGSL14C40L的Datasheet PDF文件第2页浏览型号IRGSL14C40L的Datasheet PDF文件第3页浏览型号IRGSL14C40L的Datasheet PDF文件第4页浏览型号IRGSL14C40L的Datasheet PDF文件第5页浏览型号IRGSL14C40L的Datasheet PDF文件第6页浏览型号IRGSL14C40L的Datasheet PDF文件第7页 
PD - 93891A  
IRGS14C40L  
IRGSL14C40L  
IRGB14C40L  
Ignition IGBT  
IGBT with on-chip Gate-Emitter and Gate-Collector clamps  
TERMINAL DIAGRAM  
Collector  
Features  
•BVCES = 370V min, 430V max  
•IC @ TC = 110°C = 14A  
•Most Rugged in Industry  
•Logic-Level Gate Drive  
•VCE(on) typ= 1ꢀ2V @7A @25°C  
•IL(min)=11ꢀ5A @25°C,L=4ꢀ7mH  
R1  
•> 6KV ESD Gate Protection  
•Low Saturation Voltage  
Gate  
R2  
•High Self-clamped Inductive Switching Energy  
Emitter  
Description  
JEDEC TO-263AB  
JEDEC TO-220AB  
The advanced IGBT process family includes a  
MOS gated, N-channel logic level device which  
is intended for coil-on-plug automotive ignition  
applications and small-engine ignition circuits*  
Unique features include on-chip active voltage  
clamps between the Gate-Emitter and  
Gate-Collector which provide over voltage  
protection capability in ignition circuits*  
JEDEC TO-262AA  
IRGS14C40L  
IRGSL14C40L  
IRGB14C40L  
NOTE: IRGS14C40L is available in tape and reelꢀ Add a suffix of  
TRR or TRL to the part number to determine the orientation of the  
device in the pocket, iꢀe, IRGS14C40LTRR or IRGS14C40LTRLꢀ  
Absolute Maximum Ratings  
Parameter  
Max  
Clamped  
20  
Unit  
V
Condition  
RG = 1K ohm  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
VGE = 5V  
VGE = 5V  
IC @ TC = 25°C  
A
IC @ TC = 110°C Continuous Collector Current  
14  
A
IG  
Continuous Gate Current  
Peak Gate Current  
1
mA  
mA  
V
tPK = 1ms, f = 100Hz  
IGp  
VGE  
10  
Gate-to-Emitter Voltage  
Clamped  
125  
PD @ TC = 25°C Maximum Power Dissipation  
PD @ T = 110°C Maximum Power Dissipation  
W
54  
W
TJ  
Operating Junction and  
- 40 to 175 °C  
- 40 to 175 °C  
TSTG  
VESD  
IL  
Storage Temperature Range  
Electrostatic Voltage  
6
KV C = 100pF, R = 1.5K  
ohm  
Self-clamped Inductive Switching Current  
11.5  
A
L = 4.7mH, T = 25°C  
Thermal Resistance  
Parameter  
Min  
Typ  
Max  
1.2  
40  
Unit  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
(PCB Mounted, Steady State)  
Rθ  
Rθ  
JC  
JA  
°C/W  
Transient Thermal Impedance, Juction-to-Case (Fig.11)  
Zθ  
JC  
wwwꢀirfꢀcom  
Page 1  
4/7/2000  
1234567...11

中文翻译

下载PDF

与IRGSL14C40L相关器件

型号 品牌 获取价格 描述 数据表
IRGSL14C40LPBF INFINEON

获取价格

 		IGBT with on-chip Gate-Emitter and Gate-Collector clamps
IRGSL15B60KD INFINEON

获取价格

 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGSL15B60KDPBF INFINEON

获取价格

 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGSL30B60K INFINEON

获取价格

 		INSULATED GATE BIPOLAR TRANSISTOR
IRGSL30B60KPBF INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE,
IRGSL4062DPBF INFINEON

获取价格

 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGSL4640DPBF INFINEON

获取价格

 		Insulated Gate Bipolar Transistor
IRGSL4B60K INFINEON

获取价格

 		INSULATED GATE BIPOLAR TRANSISTOR
IRGSL4B60KD1 INFINEON

获取价格

 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGSL4B60KD1PBF INFINEON

获取价格

 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IRGSL14C40L相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证