Datasheet > IRGS15B60KDTRL

IRGS15B60KDTRL

更新时间： 2024-10-01 15:35:23

品牌	Logo	应用领域
英飞凌 - INFINEON		电动机控制栅晶体管
页数	文件大小	规格书
16页	824K
描述
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

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IRGS15B60KDTRL 数据手册

PD - 95194A

IRGB15B60KDPbF

IRGS15B60KDPbF

IRGSL15B60KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (on) Non Punch Through IGBT

Technology.

V_CES= 600V

I_C= 15A, T_C=100°C

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 1.8V

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

n-channel

• Lead-Free

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

TO-262

TO-220AB

IRGB15B60KDPbF

IRGS15B60KDPbF IRGSL15B60KDPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

208

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Junction-to-Case - Diode

Min.

–––

Typ.

–––

Max.

0.6

2.1

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, steady state)

Weight

0.50

–––

1.44

–––

www.irf.com

10/03/05

12 3 4 5 6 7...16

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与IRGS15B60KDTRL相关器件

型号	品牌	获取价格	描述	数据表
IRGS15B60KDTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRGS15B60KDTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRGS15B60KDTRRP	INFINEON	获取价格	暂无描述
IRGS15B60KDTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRGS15B60KPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRGS15B60KTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRGS15B60KTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRGS30B60	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGS30B60K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGS30B60KPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,

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