是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC, D2PAK-3 | Reach Compliance Code: | compliant |
风险等级: | 5.59 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 31 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 36 ns |
门极发射器阈值电压最大值: | 5.5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 208 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 22 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 231 ns | 标称接通时间 (ton): | 52 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGS30B60 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGS30B60K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGS30B60KPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, | |
IRGS30B60KTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | |
IRGS30B60KTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, | |
IRGS4045DPbF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE | |
IRGS4045DPDF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE | |
IRGS4045DTRLPbF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE | |
IRGS4045DTRRPbF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE | |
IRGS4055PBF | INFINEON |
获取价格 |
PDP TRENCH 1GBT |