Datasheet > IRGS4062DTRRPBF

IRGS4062DTRRPBF

更新时间： 2023-01-03 09:49:19

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
12页	459K
描述
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, D2PAK-3

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中文翻译

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数据手册

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IRGS4062DTRRPBF 数据手册

PD - 97355B

IRGS4062DPbF

IRGSL4062DPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Low V_{CE (ON)}Trench IGBT Technology

V_CES= 600V

• Low switching losses

I_C= 24A, T_C= 100°C

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

t_SC≥ 5µs, T_J(max)= 175°C

• SquareRBSOA

• 100% of the parts tested for 4X rated current (I_LM

• Positive V_{CE (ON)}Temperature co-efficient

• Ultra fast soft Recovery Co-Pak Diode

• Tightparameterdistribution

)

V_CE(on)typ. = 1.65V

n-channel

• LeadFreePackage

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

Low V_{CE (ON)}and Low Switching losses

• RuggedtransientPerformanceforincreasedreliability

• ExcellentCurrentsharinginparalleloperation

• Low EMI

D²Pak

TO-262

IRGS4062DPbF

IRGSL4062DPbF

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

600

Units

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Clamped Inductive Load Current

Diode Continous Forward Current

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

I_LM

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

±20

±30

250

125

V_GE

P_D@ T_C= 25°C

P_D@ T_C= 100°C

-55 to +175

T_J

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

T_STG

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.50

Max.

0.60

1.53

–––

Units

R_θ(IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_θ(Diode)

°C/W

R_θ

–––

www.irf.com

12/07/09

12 3 4 5 6 7...12

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与IRGS4062DTRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGS4064DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel,
IRGS4064DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGS4065PBF	INFINEON	获取价格	PDP TRENCH IGBT
IRGS4065TRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 300V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRGS4065TRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 300V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRGS4086PBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 300V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3
IRGS4607DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4607DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4610DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4610DPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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