Datasheet > IRGS4620DPBF

IRGS4620DPBF

更新时间： 2024-01-25 20:42:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
14页	714K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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中文翻译

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IRGS4620DPBF 数据手册

IRGS4620DPbF

IRGB4620DPbF

IRGP4620D(-E)PbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 600V

I_C= 20A, T_C=100°C

t_SC≥ 5µs, T_J(max)= 175°C

_CE(ON)typ. = 1.55V @ IC = 12A

IRGP4620D-EPbF

TO-247AD

IRGS4620DPbF

D²Pak

IRGB4620DPbF

TO-220AC

IRGP4620DPbF

TO-247AC

n-channel

Applications

Gate

•

Appliance Drive

Collector

Emitter

Inverters

UPS

Features

Low V_CE(ON)and switching losses

Benefits

High efficiency in a wide range of applications and switching

frequencies

Improved reliability due to rugged hard switching

performance and high power capability

Square RBSOA and maximum junction temperature 175°C

Positive V_{CE (ON)}temperature coefficient and tight distribution

of parameters

Excellent current sharing in parallel operation

5µs Short Circuit SOA

Lead-Free, RoHS Compliant

Enables short circuit protection scheme

Environmentally friendly

Base part number

Package Type

Standard Pack

Form

Tube

Tape and Reel Right

Tape and Reel Left

Tube

Orderable Part Number

Quantity

IRGS4620DPBF

IRGS4620DTRRPBF

IRGS4620DTRLPBF

IRGB4620DPBF

IRGP4620DPBF

IRGP4620D-EPBF

IRGS4620DPBF

D²Pak

800

IRGB4620DPBF

IRGP4620DPBF

IRGP4620D-EPBF

TO-220AB

TO-247AC

TO-247AD

Tube

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Collector-to-Emitter Voltage

Continuous Collector Current

600

±20

Pulse Collector Current, V_GE=15V 

Clamped Inductive Load Current, V_GE=20V 

Diode Continuous Forward Current

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Transient Gate to Emitter Voltage

Maximum Power Dissipation

I_LM

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

V_GE

±30

140

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

T_J

Operating Junction and

-40 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec. (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)

Notes  through  are on page 7

10 lbf·in (1.1 N·m)

Submit Datasheet Feedback

October 29, 2013

12 3 4 5 6 7...14

中文翻译

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IRGS4620DPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRGS4620DTRLPBF	INFINEON	类似代替	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

与IRGS4620DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGS4620DPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4620DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4620DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4630DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4630DPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4640DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGS4640DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IRGS4715DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGS4715DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGS4B60K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR

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