是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | LEAD FREE, D2PAK-3 | Reach Compliance Code: | compliant |
风险等级: | 5.27 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 13 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 258 ns |
标称接通时间 (ton): | 45 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGS6B60KTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3 | |
IRGS6B60KTRRPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3 | |
IRGS8B60K | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRGS8B60KPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR | |
IRGS8B60KTRL | INFINEON |
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Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | |
IRGS8B60KTRR | INFINEON |
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Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | |
IRGSB14C40L | INFINEON |
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Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-220AB | |
IRGSL10B60KD | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGSL10B60KDPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGSL14C40L | INFINEON |
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IGBT with on-chip Gate-Emitter and Gate-Collector clamps |